Fabricating Stable, High-Mobility Transistors for Next-Generation Display Technologies
One of the core tests of stability in TFTs is the "negative-bias temperature stress" (NBTS) stability test. Two AOS TFTs of interest are indium gallium zinc oxide (IGZO) and indium tin zinc oxide (ITZO). IGZO TFTs have high NBTS stability but poor mobility while ITZO TFTs have the opposite characteristics. The existence of this tradeoff is well-known, but thus far there has been no understanding of why it occurs. In a recent study published in Nature Electronics, a team of scientists from Japan have now reported a solution to this tradeoff.